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Three different phosphorus compounds are tested as precursors for monolayer formation on Ge (100) surface to be used as the nanoscale-controlled dopant source. By applying different deposition methodologies, the role of several deposition parameters is evaluated employing X-ray Photoelectron Spectroscopy and Grazing Incidence Extended X-Ray Absorption Fine Structure Spectroscopy. The self-limiting physisorption or chemisorption process has proved to be strongly influenced by deposition ambient conditions for phosphonates or phosphonic acids, while the adsorption of allyl-phosphine occurs through a competitive oxidation reaction instead of hydrogermylation process, even in ultra-dry conditions. The produced phosphine oxide monolayer is structurally characterized, and an explanation of its formation is presented, based on the chemical features of both the hydrogenated Ge surface and P-based …
Publication date: 
21 Nov 2020

Francesco Sgarbossa, Alberto Levarato, Sara Maria Carturan, Gian Andrea Rizzi, Cristina Tubaro, Gianluca Ciatto, Federica Bondino, Igor Píš, Enrico Napolitani, Davide De Salvador

Biblio References: 
Pages: 148532
Applied Surface Science