Type:
Conference
Description:
In this work we report the electrical and optical properties of innovative MOS devices, where the dielectric layer consists of a low temperature annealed substoichiometric SiO/sub x/ film prepared by plasma enhanced chemical vapor deposition (PECVD), eventually doped with Er ions.
Publisher:
IEEE
Publication date:
21 Sep 2005
Biblio References:
Pages: 45-47
Origin:
IEEE International Conference on Group IV Photonics, 2005. 2nd