Journals | Catania UNIT

Photonic-crystal silicon-nanocluster light-emitting device

Calogero D Presti, Alessia Irrera, Giorgia Franzò, Isodiana Crupi, Francesco Priolo, Fabio Iacona, Gianfranco Di Stefano, Angelo Piana, Delfo Sanfilippo, Pier Giorgio Fallica

2006-01-16

Biblio references: Volume: 88 Issue: 3 Pages: 033501

Origin: Applied Physics Letters

Perspectives and advantages of the use of excimer laser annealing for MOS technology

V Privitera, P Alippi, M Camalleri, M Cuscuna, G Fortunato, A La Magna, G La Rosa, A Magri, L Mariucci, E Monakhov, D Salinas, F Simon, C Spinella, BG Svensson

2006-01-01

Biblio references: Volume: 29 Issue: 3 Pages: 369-379

Origin: Il nuovo cimento C

Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping

Giuliana Impellizzeri, Enrico Napolitani, Simona Boninelli, Vittorio Privitera, Trudo Clarysse, Wilfried Vandervorst, Francesco Priolo

2006-01-01

Biblio references: Volume: 24 Pages: 381

Origin: J. Vac. Sci. Technol. B

Fluorine incorporation during Si solid phase epitaxy

G Impellizzeri, S Mirabella, L Romano, E Napolitani, A Carnera, MG Grimaldi, F Priolo

2006-01-01

Biblio references: Volume: 242 Issue: 1-2 Pages: 614-616

Origin: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Photonic-crystal silicon-nanocluster light-emitting device

Isodiana Crupi, Alessia Irrera, Delfo Sanfilippo, Fabio Iacona, Giorgia Franzó, Gianfranco Di Stefano, Calogero D Presti, Angelo Piana, Pier Giorgio Fallica, Francesco Priolo

2006-01-01

Biblio references: Volume: 88 Pages: 1-3

Origin: Applied Physics Letters

Semiconductors I: Bulk-Growth of ferromagnetic nanoparticles in a diluted magnetic semiconductor obtained by Mn+ implantation on Ge single crystals

M Passacantando, L Ottaviano, F D'Orazio, F Lucari, M De Biase, G Impellizzeri, F Priolo

2006-01-01

Biblio references: Volume: 73 Issue: 19 Pages: 195207-195207

Origin: Physical Review-Section B-Condensed Matter

Atomistic mechanism of B diffusion in Si

De SALVADOR D, E Napolitani, S Mirabella, G Bisognin, G Impellizzeri, A Carnera, F Priolo

2006-01-01

Biblio references: Volume: 97 Pages: 255902

Origin: PHYSICAL REVIEW LETTERS

Condensed Matter: Electronic Properties, etc.-Effect of Strain on the Carrier Mobility in Heavily Doped p-Type Si

Lucia Piro, Alberto Maria Romano, Maria Grazia Bisognin, Gabriele Grimaldi, Enrico Salvador, Davide De Napolitani

2006-01-01

Biblio references: Volume: 97 Issue: 13 Pages: 136605-136800

Origin: Physical Review Letters

E. Napolitani, and D. De Salvador

AM Romano, MG Piro, G Bisognin Grimaldi

2006-01-01

Biblio references: Volume: 97 Pages: 136605

Origin: Phys. Rev. Lett

Room Temperature Boron Diffusion in Amorphous Silicon

Jeannette M Jacques, Kevin S Jones, Mark E Law, Lance S Robertson, Leonard M Rubin, Enrico Napolitani

2006-01-01

Biblio references: Volume: 912 Pages: 53

Origin: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Photonic-crystal silicon-nanocluster light-emitting device

Perspectives and advantages of the use of excimer laser annealing for MOS technology

Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping

Fluorine incorporation during Si solid phase epitaxy

Photonic-crystal silicon-nanocluster light-emitting device

Semiconductors I: Bulk-Growth of ferromagnetic nanoparticles in a diluted magnetic semiconductor obtained by Mn+ implantation on Ge single crystals

Atomistic mechanism of B diffusion in Si

Condensed Matter: Electronic Properties, etc.-Effect of Strain on the Carrier Mobility in Heavily Doped p-Type Si

E. Napolitani, and D. De Salvador

Room Temperature Boron Diffusion in Amorphous Silicon

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