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Type: 
Conference
Description: 
In this work we demonstrate that He co-implantation can be a powerful tool to control B diffusion in crystalline silicon (c-Si). In particular, the He induced damage leads to the formation of a distribution of nano voids near the surface that locally suppress the amount of self-interstitial s (Is) generated by further B implantation. Thus, B diffusion is reduced and the B implanted profile assumes a box-like shape. In particular, we analyze the microscopic mechanisms leading to the implanted B-nanovoids interaction, demonstrating that the Is ...
Publisher: 
Vittorio Privitera IMM-CNR
Publication date: 
1 Jan 2007
Authors: 
Biblio References: 
Origin: 
15th IEEE International Conference on Advanced Thermal Processing of Semiconductors