The low temperature epitaxial crystallization of chemical vapor deposited silicon layers obtained by means of high energy ion irradiation is studied. Both the kinetics of the process and the morphology of the regrown layers are characterized. This novel procedure, in view of the small thermal budgets involved, can result interesting for possible application to the bipolar technology.
Springer Science & Business Media
6 Dec 2012
ESPRIT’90: Proceedings of the Annual ESPRIT Conference Brussels, November 12–15, 1990