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The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence x-ray fluorescence spectroscopy (GI-XRF), secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI-XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be ∼1×1015 cm−2 for an implanted dose of 1×1016 cm−2 with a maximum concentration of ∼10 at. %. The strain observed in the Z-contrast images also suggests a significant …
American Institute of Physics
Publication date: 
15 Aug 2008

Lirong Pei, Gerd Duscher, Christian Steen, Peter Pichler, Heiner Ryssel, Enrico Napolitani, Davide De Salvador, Alberto Maria Piro, Antonio Terrasi, Fabrice Severac, Filadelfo Cristiano, Karthik Ravichandran, Naveen Gupta, Wolfgang Windl

Biblio References: 
Volume: 104 Issue: 4 Pages: 043507
Journal of Applied Physics