Boron diffusion is investigated in details by monitoring B-sharp concentration profiles embedded in isoconcentration doping backgrounds. Atomistic diffusion parameters (kick-out rate g, mean-free path of the mobile species λ, and the diffusivity D) are experimentally evaluated as a function of temperature and doping level both of p or n type. This allows for a quantitative determination of the physical phenomena involved in the B diffusion process. We found that negatively charged substitutional B diffuses by interaction with neutral or doubly positively charged self-interstitials. The B I complex formed after interaction diffuses mainly in a neutral state and, to a less extent, through singly negatively charged state. The former contributes for about one tenth to the full diffusion in intrinsic condition at 700 C whereas it plays a significant role in high n-codoping regime. Moreover, n codoping with As or P induces a Coulomb …